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www.vishay.com
VS-GP300TD60S
Vishay Semiconductors
Dual INT-A-PAK Low Profile “Half Bridge” (Trench PT IGBT), 300 A
Proprietary Vishay IGBT Silicon “L Series”
Dual INT-A-PAK Low Profile
PRIMARY CHARACTERISTICS
VCES IC DC at TC = 104 °C VCE(on) (typical) at 300 A, 25 °C
Speed
600 V 300 A 1.30 V DC to 1 kHz
Package
Dual INT-A-PAK low profile
Circuit configuration
Half bridge
FEATURES • Trench PT IGBT technology • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 • Designed for industrial level • Material categorization: for definitions of compliance
please see www.vishay.
VS-GP300TD60S Datasheet
