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VS-GP250SA60S - IGBT

Features

  • Standard speed Trench PT IGBT.
  • Fully isolated package.
  • Very low internal inductance ( 5 nH typical).
  • Industry standard outline.
  • UL approved file E78996.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com VS-GP250SA60S Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 100 A, 25 °C Speed 600 V 239 A at 90 °C 1.10 V DC to 1 kHz Package SOT-227 Circuit configuration Single switch no diode FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.
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