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VS-GB90SA120U - IGBT

Features

  • NPT Gen 5 IGBT technology.
  • Square RBSOA.
  • Positive VCE(on) temperature coefficient.
  • Fully isolated package.
  • Speed 8 kHz to 60 kHz.
  • Very low internal inductance ( 5 nH typical).
  • Industry standard outline.
  • UL approved file E78996.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com VS-GB90SA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A SOT-227 PRIMARY CHARACTERISTICS VCES VCE(on) typical at 75 A, 25 °C IC DC Speed 1200 V 3.3 V 90 A at 90 °C 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch no diode FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • Positive VCE(on) temperature coefficient • Fully isolated package • Speed 8 kHz to 60 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.
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