Click to expand full text
www.vishay.com
VS-GB90DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A
SOT-227
PRIMARY CHARACTERISTICS
VCES IC DC VCE(on) typical at 75 A, 25 °C Speed
1200 V 90 A at 90 °C
3.3 V 8 kHz to 30 kHz
Package
SOT-227
Circuit configuration
Single switch with AP diode
FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance
please see www.vishay.
VS-GB90DA120U Datasheet
