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VS-GB200TS60NPbF - Ultrafast Speed IGBT

Features

  • Generation 5 Non Punch Through (NPT) technology.
  • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz.
  • Low VCE(on).
  • 10 μs short circuit capability.
  • Square RBSOA.
  • Positive VCE(on) temperature coefficient.

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Full PDF Text Transcription

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www.vishay.com VS-GB200TS60NPbF Vishay Semiconductors INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A INT-A-PAK PRODUCT SUMMARY VCES 600 V IC DC 209 A VCE(on) at 200 A, 25 °C 2.6 V Package INT-A-PAK Circuit Half Bridge with SMD Gate Resistor FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 • Designed for industrial level • Material categorization: For definitions of compliance please see www.vishay.
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