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VS-GB200TH120U - Molding Type Module IGBT

Description

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.

It is designed for applications such as electronic welder and inductive heating.

Features

  • 10 μs short circuit capability.
  • VCE(on) with positive temperature coefficient.
  • Maximum junction temperature 150 °C.
  • Low switching losses.
  • Rugged with ultrafast performance.
  • Low inductance case.
  • Fast and soft reverse recovery antiparallel FWD.
  • Isolated copper baseplate using DCB (Direct Copper Bonding) technology.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com VS-GB200TH120U Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A Dual INT-A-PAK PRIMARY CHARACTERISTICS VCES IC at TC = 80 °C VCE(on) (typical) at IC = 200 A, 25 °C Speed 1200 V 200 A 3.10 V 8 kHz to 30 kHz Package Dual INT-A-PAK Circuit configuration Half bridge FEATURES • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low switching losses • Rugged with ultrafast performance • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.
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