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www.vishay.com
VS-ENQ030L120S
Vishay Semiconductors
EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A
EMIPAK-1B (package example)
FEATURES • Ultrafast Trench IGBT technology • HEXFRED® and silicon carbide diode technology • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance • Low internal inductances • PressFit pins locking technology. Patent # US.263.820 B2 • UL approved file E78996 • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
TRENCH IGBT 1200 V STAGE
VCES VCE(ON) typical at IC = 30 A
1200 V 2.12 V
IC at TC = 102 °C
30 A
TRENCH IGBT 600 V STAGE
VCES VCE(ON) typical at IC = 30 A
600 V 1.
VS-ENQ030L120S Datasheet
