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VS-E4PU6006LHN3 - Ultrafast Soft Recovery Diode

Description

Gen 4 Fred technology, state of the art, ultralow VF, soft switching optimized for Discontinuous (Critical) Mode (DCM) and IGBT F/W diode. The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching elem

Features

  • Gen 4 FRED Pt® technology.
  • Low IRRM and reverse recovery charge.
  • Very low forward voltage drop.
  • Polymide passivated chip for high reliability standard.
  • 175 °C operating junction temperature.
  • AEC-Q101 qualified, meets JESD 201 class 1A whisker test.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VS-E4PU6006LHN3
Manufacturer Vishay
File Size 158.20 KB
Description Ultrafast Soft Recovery Diode
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www.vishay.com VS-E4PU6006LHN3 Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt® Gen 4 2 1 3 TO-247AD 2L Base cathode 2 1 Cathode 3 Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF 60 A 600 V 1.29 V trr typ. See Recovery table TJ max. Package 175 °C TO-247AD 2L Circuit configuration Single FEATURES • Gen 4 FRED Pt® technology • Low IRRM and reverse recovery charge • Very low forward voltage drop • Polymide passivated chip for high reliability standard • 175 °C operating junction temperature • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization: for definitions of compliance please see www.vishay.
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