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VS-20MT120UFP - IGBT MTP

Features

  • Ultrafast non punch through (NPT) technology.
  • Positive VCE(on) temperature coefficient.
  • 10 μs short circuit capability.

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Datasheet preview – VS-20MT120UFP

Datasheet Details

Part number VS-20MT120UFP
Manufacturer Vishay
File Size 268.96 KB
Description IGBT MTP
Datasheet download datasheet VS-20MT120UFP Datasheet
Additional preview pages of the VS-20MT120UFP datasheet.

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Full PDF Text Transcription

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www.vishay.com VS-20MT120UFP Vishay Semiconductors “Full Bridge” IGBT MTP (Ultrafast NPT IGBT), 40 A MTP PRIMARY CHARACTERISTICS VCES IC at TC = 25 °C VCE(on) Speed 1200 V 40 A 3.29 V 8 kHz to 30 kHz Package MTP Circuit configuration Full bridge FEATURES • Ultrafast non punch through (NPT) technology • Positive VCE(on) temperature coefficient • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • Low diode VF • Square RBSOA • Aluminum nitride DBC • Very low stray inductance design for high speed operation • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.
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