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VS-20MT120UFAPbF - IGBT MTP

Features

  • Ultrafast Non Punch Through (NPT) technology.
  • Positive VCE(on) temperature coefficient.
  • 10 μs short circuit capability.

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Datasheet preview – VS-20MT120UFAPbF

Datasheet Details

Part number VS-20MT120UFAPbF
Manufacturer Vishay
File Size 851.75 KB
Description IGBT MTP
Datasheet download datasheet VS-20MT120UFAPbF Datasheet
Additional preview pages of the VS-20MT120UFAPbF datasheet.

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Full PDF Text Transcription

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www.vishay.com VS-20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A MTP PRODUCT SUMMARY VCES IC at TC = 96 °C VCE(on) (typical) at IC = 20 A, 25 °C Package Circuit 1200 V 20 A 3.29 V MTP Full bridge FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • Low diode VF • Square RBSOA • Al2O3 DBC substrate • Very low stray inductance design for high speed operation • UL approved file E78996 • Speed 8 kHz to 60 kHz • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.
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