Click to expand full text
www.DataSheet.co.kr
New Product
VBT6045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.33 V at IF = 10 A
TMBS ®
TO-263AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
• Not recommended for PCB bottom side wave mounting • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
1 VBT6045CBP
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TOP max. 2 x 30 A 45 V 320 A 0.
VBT6045CBP Datasheet
