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VBT1080C-M3
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.49 V at IF = 3 A
TMBS ®
TO-263AB
K
2 1
VBT1080C
PIN 1
K
PIN 2
HEATSINK
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.
PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV) VRRM IFSM VF at IF = 5 A TJ max. Diode variation
2x5A 80 V 80 A 0.
VBT1080C-M3 Datasheet
