VBT10202C-M3 Datasheet PDF (Dual High Voltage Trench MOS Barrier Schottky Rectifier)

VBT10202C-M3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology generation 2.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and TO-262AA package).
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

Datasheet Details

Part number	VBT10202C-M3
Manufacturer	Vishay
File Size	141.57 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VBT10202C-M3 Datasheet
Additional preview pages of the VBT10202C-M3 datasheet.

📁 Similar Datasheet

VBT2045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)

VBT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)

VBT4045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)

VBT6045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)

VBTA1220N - N-Channel MOSFET (VBsemi)

VBTA1220NS - N-Channel MOSFET (VBsemi)

VBTA7322 - N-Channel MOSFET (VBsemi)

Full PDF Text Transcription

Click to expand full text

VT10202C-M3, VBT10202C-M3, VIT10202C-M3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TMBS ® TO-220AB VT10202C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K TO-262AA K FEATURES • Trench MOS Schottky technology generation 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.

Published: Feb 5, 2016 |