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V6WM100C-M3
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.56 V at IF = 3 A
TMBS®
TO-252 (D-PAK)
K
A
A V6WM100C
A
K
A
HEATSINK
FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 3 A (TA = 125 °C) TJ max. Package
2x3A 100 V 75 A 0.
V6WM100C-M3 Datasheet
