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V6WL45C
www.vishay.com
Vishay General Semiconductor
Ultra Low VF = 0.34 V at IF = 3 A
FEATURES
• Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation
K
Dual Trench MOS Barrier Schottky Rectifier
TMBS®
TO-252 (D-PAK)
• Meets MSL level 1 , per J-STD- 020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
A
A V6WL45C
A A K HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/D C conve rters, switching power supplies, freewheelin g diodes, O R-ing diode, and reverse battery protection.
MECHANICAL DATA PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 3 A (TA = 125 °C) TJ max. Package Diode variation 2x3A 45 V 80 A 0.
V6WL45C Datasheet
