V20120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 TO-263AB K TO-262AA.

Vishay

Datasheet Details

Part number	V20120C-E3
Manufacturer	Vishay
File Size	216.79 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V20120C-E3 Datasheet
Additional preview pages of the V20120C-E3 datasheet.

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Full PDF Text Transcription

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V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20120C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VF20120C 123 PIN 1 PIN 2 PIN 3 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.

Published: Apr 29, 2016 |