V20100S - High-Voltage Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
AEC-Q101 qualified.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	V20100S
Manufacturer	Vishay
File Size	140.90 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V20100S Datasheet
Additional preview pages of the V20100S datasheet.

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Full PDF Text Transcription

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www.vishay.com V20100S, VI20100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A TO-220AB TMBS® TO-262AA K V20100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI20100S 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.

Published: Feb 2, 2012 |