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SiZ260DT - Dual N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Gen IV power MOSFETs.
  • 100 % Rg and UIS tested.
  • Integrated MOSFET half bridge power stage.
  • Optimized Qgs/Qgs ratio improves switching characteristics.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiZ260DT
Manufacturer Vishay
File Size 274.09 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SiZ260DT Datasheet
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Full PDF Text Transcription

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www.vishay.com SiZ260DT Vishay Siliconix Dual N-Channel 80 V (D-S) MOSFETs PowerPAIR® 3 x 3S S2 5 S2 6 S2 7 G2 8 S(P1/iDn 2 9) D1 3.3 mm 1 3.3 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 4 D1 3 D1 2 D1 1 G1 Bottom View CHANNEL-1 CHANNEL-2 80 80 0.0245 0.0247 0.0310 0.0310 6.2 6.3 24.7 24.6 Dual FEATURES • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Integrated MOSFET half bridge power stage • Optimized Qgs/Qgs ratio improves switching characteristics • Material categorization: for definitions of compliance please see www.vishay.
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