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SiZ322DT - Dual N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Gen IV power MOSFET.
  • High side and low side MOSFETs form optimized combination for 50 % duty cycle.
  • Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiZ322DT
Manufacturer Vishay
File Size 177.89 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SiZ322DT Datasheet
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Full PDF Text Transcription

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www.vishay.com SiZ322DT Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFET PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 (Pin 9) 3 mm 1 3 mm Top View D1 1 4 3 2 G1 D1 D1 D1 Bottom View PRODUCT SUMMARY MOSFET CHANNEL-1 AND CHANNEL-2 VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a, d Configuration 25 0.00635 0.00900 6.2 30 Dual ORDERING INFORMATION Package Lead (Pb)-free and halogen-free FEATURES • TrenchFET® Gen IV power MOSFET • High side and low side MOSFETs form optimized combination for 50 % duty cycle • Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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