SiSS80DN - N-Channel 20V MOSFET

Vishay

Key Features

TrenchFET® Gen IV power MOSFET.
Less than 0.92 mΩ in a package footprint of 10.89 mm2.
2.5 V rated RDS(on).
Optimized Qg, Qgd, and Qgd/Qgs ratio reduce switching related power loss.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

SiSS80DN n-channel 20v mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SiSS80DN
Manufacturer	Vishay
File Size	220.46 KB
Description	N-Channel 20V MOSFET
Datasheet	SiSS80DN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SiSS80DN Vishay Siliconix N-Channel 20 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V RDS(on) max. (Ω) at VGS = 2.5 V Qg typ. (nC) ID (A) g Configuration 1 4 3 S 2 S S G Bottom View 20 0.00092 0.00115 0.0030 36 210 Single FEATURES • TrenchFET® Gen IV power MOSFET • Less than 0.92 mΩ in a package footprint of 10.89 mm2 • 2.5 V rated RDS(on) • Optimized Qg, Qgd, and Qgd/Qgs ratio reduce switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.