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SiSS06DN - N-Channel 30V MOSFET

Datasheet Summary

Features

  • TrenchFET® Gen IV power MOSFET.
  • Very low RDS(on) in a compact and thermally enhanced package.
  • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiSS06DN
Manufacturer Vishay
File Size 226.74 KB
Description N-Channel 30V MOSFET
Datasheet download datasheet SiSS06DN Datasheet
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Full PDF Text Transcription

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www.vishay.com SiSS06DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.00138 0.00203 24.6 172.6 a Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS(on) in a compact and thermally enhanced package • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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