Datasheet4U Logo Datasheet4U.com

SiSS32ADN - N-Channel 80V MOSFET

Key Features

  • TrenchFET® Gen IV power MOSFET.
  • Very low RDS - Qg figure-of-merit (FOM).
  • Tuned for the lowest RDS - Qoss FOM.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet Details

Part number SiSS32ADN
Manufacturer Vishay
File Size 232.89 KB
Description N-Channel 80V MOSFET
Datasheet download datasheet SiSS32ADN Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SISS27DN-T1-GE3 30V P-Channel MOSFET Kexin
SIS0100 Black and White Image Sensor Camera Module Sanyo Semicon Device
SiS1057 JFET Operational Amplifier Silicon Supplies
SIS2305PLT1G P-Channel MOSFET Kexin
SIS23C128 16K x 8 CMOS Mask ROM Silicon Integrated Systems

Other Datasheets by Vishay

Part Number Description
SiSS32DN N-Channel 80V MOSFET
SiSS32LDN N-Channel 80V MOSFET
SiSS30ADN N-Channel 80V MOSFET
SiSS05DN P-Channel MOSFET
SiSS06DN N-Channel 30V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com SiSS32ADN Vishay Siliconix N-Channel 80 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration ORDERING INFORMATION Package Lead (Pb)-free and halogen-free 1 4 3 S 2 S S G Bottom View 80 0.0073 0.0087 18.5 63 Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.