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SiSD4112LDN - N-Channel 100V MOSFET

Key Features

  • TrenchFET® Gen IV power MOSFET.
  • Very low RDS x Qg figure-of-merit (FOM).
  • Source flip technology, enhance thermal performance.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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www.vishay.com SiSD4112LDN Vishay Siliconix N-Channel 100 V (D-S) MOSFET 3.3 mm PowerPAK® 1212-F D 5 D 6 D 7 D 8 G 1 3.3 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 S 3 S 2 S S Bottom View 100 0.012 0.0145 18 44 a Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Source flip technology, enhance thermal performance • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.