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DATASHEET SISD0600ED120i20
ED-Type phase leg IGBT module
VCE = 1200 V IC = 2 x 600 A
i20 ultra-low loss fine pattern Trench IGBT chipset
Baseplate isolation with efficient Al2O3 ceramic
Cu baseplate for low thermal resistance
Industry standard package
Maximum ratings1
PARAMETER Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current
Isolation voltage Junction operating temperature Case temperature Storage temperature Mounting torques4
SYMBOL CONDITIONS
VCES
VGE = 0 V, Tvj = 25 °C
IC
TC = 120 °C, Tvj = 175 °C
ICM
tp = 1 ms
VGES
Ptot
TC = 25 °C, Tvj = 175 °C, per switch
IF
IFRM
tp = 1 ms
IFSM
VR = 0 V, Tvj = 150 °C, tp = 10 ms,
I2t
half-sinewave
Visol
1
SISD0600ED120i20 Datasheet
