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SiHLL110 - Power MOSFET

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques.

Features

  • Surface mount.
  • Available in tape and reel.
  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • Logic-level gate drive.
  • RDS(on) specified at VGS = 4 V and 5 V.
  • Fast switching Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com IRLL110, SiHLL110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.0 V 6.1 2.6 3.3 Single 0.54 D SOT-223 D S D G Marking code: LB G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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