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SiHFZ24S - Power MOSFET

Description

Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced process technology.
  • Surface mount (IRFZ24S, SiHFZ24S).
  • 175 °C operating temperature.
  • Fast switching Available.
  • Material categorization:  for definitions of compliance please see www. vishay. com/doc?99912 Available Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.  Please see the informa.

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Full PDF Text Transcription

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www.vishay.com IRFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 5.8 11 Single 0.10 D D2PAK (TO-263) G GD S S N-Channel MOSFET FEATURES • Advanced process technology • Surface mount (IRFZ24S, SiHFZ24S) • 175 °C operating temperature • Fast switching Available • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 Available Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.
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