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Power MOSFET
IRFZ20, SiHFZ20
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
50 VGS = 10 V
17 9.0 3.0 Single
0.10
TO-220AB
D
S D G
G
S N-Channel MOSFET
FEATURES
• Extremely Low RDS(on) • Compact Plastic Package
• Fast Switching
• Low Drive Current
• Ease of Paralleling
• Excellent Temperature Stability
• Parts Per Million Quality
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The technology has expanded its product base to serve the low voltage, very low RDS(on) MOSFET transistor requirements. Vishay’s highly efficient geometry and unique processing have been combined to create the lowest on resistance per device performance.