Si4848BDY
FEATURES
- Trench FET® Gen V power MOSFET
- 100 % Rg tested
- Material categorization for definitions of pliance please see .vishay./doc?99912
4 3G 2S 1S S Top View
Marking Code: 4848B
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 6 V Qg typ. (n C) ID (A) d Configuration
150 0.089 0.110
3.7 5 Single
APPLICATIONS
- DC/DC converters
- Boost converters
- LED backlighting
- PD switch
- Load switch
N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
SO-8 Si4848BDY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous source-drain diode current
Single pulse avalanche current Single pulse avalanche energy
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70...
