SI4840BDY
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition
- Trench FET® Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested
- pliant to Ro HS directive 2002/95/EC
APPLICATIONS
SO-8
S S S G 1 2 3 4 Top View S Ordering Information: Si4840BDY-T1-E3 (Lead (Pb)-free) Si4840BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G
- Synchronous Rectification
- POL, IBC
- Secondary Side
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 m H Symbol VDS VGS ID IDM IAS EAS IS Limit 40 ± 20 19 15 12.4a, b 9.9a, b 50 15 11 5 2.1a, b 6 3.8 2.5a, b 1.6a, b
- 55 to 150 Unit V
A m J A
TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range
PD TJ,...
