Si4826DY
FEATURES
D 100% Rg Tested
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D2 6 D2 5 D2
Top View
Ordering Information: Si4826DY Si4826DY-T1 (with Tape and Reel)
D1 D2 D2 D2
G1 G2
S1
N-Channel 1 MOSFET
S2
N-Channel 2 MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Channel 1
Channel 2
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)NO TAG Pulsed Drain Current
TA = 25_C TA = 70_C
Continuous Source Current (Diode Conduction)NO TAG
Maximum Power Dissipation NO TAG
TA = 25_C TA = 70_C
Operating Junction and Storage Temperature Range
VDS VGS
ID IDM IS
PD TJ, Tstg
30 20 6.3 5.3 9.5 7.0 5.4 4.2 7.6 5.6 30 40 1.3 0.9 2.2 1.15 1.4 1.0 2.4 1.25 0.9 0.64 1.5 0.80
- 55 to 150
Unit
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient NO TAG
Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. t v 10 sec Steady-State Steady-State
Symbol...
