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SQ4182EY
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
Package
SO-8 Single D D5 D6 D7 8
30 0.0038 0.0050
32 Single SO-8
FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D
G
4 3G 2S 1S S Top View
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Continuous Source Current (Diode Conduction)
TC = 25 °C a TC = 125 °C
Pulsed Drain Current b
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.