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SQ4261 - Chip Type 2C4261 Geometry 0014 Polarity PNP

Features

  • Special Characteristics 2N4261, 2N4261UB, 2N4260, 2N4260UB, SD4261, SD4261F, SQ4261, SQ4261F ft = 1.8 GHz (typ) at 10 mA/10V Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 12 kÅ min. Au - 6.5 kÅ nom. 2.1 mils x 2.1 mils 2.1 mils x 2.1 mils 8 mils nominal 16 mils x 16 mils Silox Passivated Electrical Characteristics TA = 25oC Parameter BVCEO BVCBO BVEBO Test conditions IC = 10.0 mA, IB = 0 IC = 10 µA, IE = 0 IE = 1.

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Datasheet Details

Part number SQ4261
Manufacturer Semicoa Semiconductor
File Size 29.18 KB
Description Chip Type 2C4261 Geometry 0014 Polarity PNP
Datasheet download datasheet SQ4261 Datasheet
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Full PDF Text Transcription

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Data Sheet No. 2C4261 Chip Type 2C4261 Geometry 0014 Polarity PNP Generic Packaged Parts: 2N4260, 2N4261 Chip type 2C4261 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for low voltage, low gain RF amplifier applications. Features: Special Characteristics 2N4261, 2N4261UB, 2N4260, 2N4260UB, SD4261, SD4261F, SQ4261, SQ4261F ft = 1.8 GHz (typ) at 10 mA/10V Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 12 kÅ min. Au - 6.5 kÅ nom. 2.1 mils x 2.1 mils 2.1 mils x 2.1 mils 8 mils nominal 16 mils x 16 mils Silox Passivated Electrical Characteristics TA = 25oC Parameter BVCEO BVCBO BVEBO Test conditions IC = 10.
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