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SIUD412ED - N-Channel MOSFET

Features

  • TrenchFET® power MOSFET.
  • Ultra small 0.8 mm x 0.6 mm outline.
  • Ultra thin 0.4 mm max. height.
  • Typical ESD protection 1500 V (HBM).
  • 1.2 V rated RDS(ON).
  • 100% Rg tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SIUD412ED
Manufacturer Vishay
File Size 180.53 KB
Description N-Channel MOSFET
Datasheet download datasheet SIUD412ED Datasheet

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Full PDF Text Transcription

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www.vishay.com SiUD412ED Vishay Siliconix N-Channel 12 V (D-S) MOSFET PowerPAK® 0806 Single D 3 0.4 mm 0.8 mm 1 0.6 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.8 V RDS(on) max. () at VGS = 1.5 V RDS(on) max. () at VGS = 1.2 V Qg typ. (nC) ID (A) Configuration 2 S Bottom View 1 G 12 0.34 0.4 0.55 1.2 2.5 0.47 0.5 a, f Single FEATURES • TrenchFET® power MOSFET • Ultra small 0.8 mm x 0.6 mm outline • Ultra thin 0.4 mm max. height • Typical ESD protection 1500 V (HBM) • 1.2 V rated RDS(ON) • 100% Rg tested • Material categorization: for definitions of compliance please see www.vishay.
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