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SIUD403ED - P-Channel MOSFET

Features

  • TrenchFET® Gen III p-channel power MOSFET.
  • Ultra small 0.8 mm x 0.6 mm outline.
  • Ultra thin 0.4 mm max. height.
  • Typical ESD protection 1500 V (HBM).
  • -1.5 V rated RDS(ON).
  • 100% Rg tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SIUD403ED
Manufacturer Vishay
File Size 181.30 KB
Description P-Channel MOSFET
Datasheet download datasheet SIUD403ED Datasheet

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Full PDF Text Transcription

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www.vishay.com SiUD403ED Vishay Siliconix P-Channel 20 V (D-S) MOSFET PowerPAK® 0806 Single D 3 0.4 mm 0.8 mm 1 0.6 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V RDS(on) max. () at VGS = -1.5 V Qg typ. (nC) ID (A) Configuration 2 S Bottom View 1 G -20 1.25 1.7 2.7 4.4 0.64 -0.5 a, f Single FEATURES • TrenchFET® Gen III p-channel power MOSFET • Ultra small 0.8 mm x 0.6 mm outline • Ultra thin 0.4 mm max. height • Typical ESD protection 1500 V (HBM) • -1.5 V rated RDS(ON) • 100% Rg tested • Material categorization: for definitions of compliance please see www.vishay.
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