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SISS28DN - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Gen IV power MOSFET.
  • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SISS28DN
Manufacturer Vishay
File Size 147.65 KB
Description N-Channel MOSFET
Datasheet download datasheet SISS28DN Datasheet
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Full PDF Text Transcription

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www.vishay.com SiSS28DN Vishay Siliconix N-Channel 25 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) () (MAX.) 0.00152 at VGS = 10 V 0.00224 at VGS = 4.5 V ID (A) a, g 60 60 Qg (TYP.) 21.8 nC PowerPAK® 1212-8S D D D 6 7 5 D 8 3.3 mm 1 Top View 3.3 mm 1 4 3 S 2 S S G Bottom View Ordering Information:  SiSS28DN-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® Gen IV power MOSFET • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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