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SiS782DN
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0095 at VGS = 10 V 30
0.0120 at VGS = 4.5 V
ID (A)e 16 16
Qg (Typ.) 9.5 nC
PowerPAK 1212-8
3.30 mm
S 1S
3.30 mm
2 S
3 G
4
D
8D 7 D 6 D 5
Bottom View
Ordering Information: SiS782DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode
• Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.