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SIS778DN - N-Channel MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • SkyFET Monolithic TrenchFET® Power MOSFET and Schottky Diode.
  • 100 % Rg and UIS Tested.
  • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number SIS778DN
Manufacturer Vishay
File Size 468.39 KB
Description N-Channel MOSFET
Datasheet download datasheet SIS778DN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiS778DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. 0.0050 at VGS = 10 V 0.0062 at VGS = 4.5 V ID (A)e 35 35 Qg (Typ.) 13.3 nC PowerPAK 1212-8 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3G 4 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Power MOSFET and Schottky Diode • 100 % Rg and UIS Tested • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.
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