Full PDF Text Transcription for SIHB24N65EF (Reference)
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www.vishay.com SiHB24N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(o...
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63) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 122 17 36 Single 0.156 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free FEATURES • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.
SIHB24N65EF Datasheet
