The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Si4477DY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
ID (A)d - 26.6 - 20.6 Qg (Typ.) 59 nC
PRODUCT SUMMARY
VDS (V) - 20 RDS(on) (Ω) 0.0062 at VGS = - 4.5 V 0.0105 at VGS = - 2.5 V
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch • Adapter Switch - Notebook - Game Station
8 7 6 5 Top View Ordering Information: Si4477DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D D D D G
SO-8
S S S G 1 2 3 4
S
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
SI4477DY Datasheet
