The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
N-Channel 60 V (D-S) MOSFET
Si4470EY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60 0.011 at VGS = 10 V 0.013 at VGS = 6.0 V
ID (A) 12.7 11.7
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Primary Side Switch
D
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
G
Top View
Ordering Information: Si4470EY-T1-E3 (Lead (Pb)-free) Si4470EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
12.7 9.0 10.6 7.
SI4470EY Datasheet
