SI1036X
FEATURES
- Trench FET® Power MOSFET
- 100 % Rg tested
- Gate-source ESD protected: 1000 V
- Material categorization:
For definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Load switch
- High speed switching
- DC/DC converters / boost converters
- For smart phones, tablet PCs and mobile puting
D1 D2
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) a
TA = 25 °C TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
TA = 25 °C
Maximum Power Dissipation a
TA = 25 °C TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT 30 ±8
0.61 a,b 0.49 a,b
2 0.18 a,b 0.22 a,b 0.14 a,b -55 to 150
THERMAL RESISTANCE RATINGS
PARAMETER...
