Full PDF Text Transcription for SI1036X (Reference)
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www.vishay.com Dual N-Channel 30 V (D-S) MOSFET Si1036X Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. 0.540 at VGS = 4.5 V 0.600 at VGS = 2.5 V 0.700 at VG...
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RDS(on) () MAX. 0.540 at VGS = 4.5 V 0.600 at VGS = 2.5 V 0.700 at VGS = 1.8 V 1.100 at VGS = 1.5 V ID (A) 0.5 0.2 0.2 0.05 Qg (TYP.) 0.72 nC SC-89 Dual (6 leads) S2 G2 4 D1 5 6 3 2 D2 1 G1 S1 Top View Marking Code: B Ordering Information: Si1036X-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Power MOSFET • 100 % Rg tested • Gate-source ESD protected: 1000 V • Material categorization: For definitions of compliance please see www.vishay.
SI1036X Datasheet
