Description
The TCET2600, TCET4600 consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in 8 pin or 16 lead plastic dual inline package.
Features
- Extra low coupling capacity - typical 0.2 pF.
- High common mode rejection.
- Low temperature coefficient of CTR.
- Rated impulse voltage (transient overvoltage)
VIOTM = 10 kV peak.
- Isolation test voltage (partial discharge test
voltage) Vpd = 1.6 kV peak.
- Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS.
- Rated recurring peak voltage (repetitive) VIORM = 848 Vpeak.
- Thickness though insulation ≥ 0.4 mm.
- Creepage.
TCET4600 Datasheet
