Description
The TCED4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 8-pin (dual) or 16-pin (quad) plastic dual inline package.
Features
- Isolation materials according to UL 94 V-0.
- Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664).
- Climatic classification 55/100/21 (IEC 60068
part 1).
- Special construction: therefore, extra low
coupling capacity of typical 0.2 pF, high common mode rejection.
- Low temperature coefficient of CTR.
- Creepage current resistance according to VDE 0303 / IEC 60112 comparative tracking index: CTI ≥ 175.
- Rated impulse voltage (transient overvolta.
TCED4100 Datasheet
