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BPV11F - Silicon NPN Phototransistor

Description

BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter.

Filter bandwidth is matched with 900 nm to 950 nm IR emitters.

Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • High radiant sensitivity.
  • Daylight blocking filter matched with 940 nm emitters.
  • Fast response times.
  • Angle of half sensitivity:  = ± 15°.
  • Base terminal connected.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number BPV11F
Manufacturer Vishay
File Size 106.91 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet BPV11F Datasheet

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www.vishay.com BPV11F Vishay Semiconductors Silicon NPN Phototransistor 12784 DESCRIPTION BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times • Angle of half sensitivity:  = ± 15° • Base terminal connected • Material categorization: For definitions of compliance please see www.vishay.
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