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BPV11 - Silicon NPN Phototransistor

Description

BPV11 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package with base terminal.

It is sensitive to visible and near infrared radiation.

Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • High photo sensitivity.
  • High radiant sensitivity.
  • Suitable for visible and near infrared radiation.
  • Fast response times.
  • Angle of half sensitivity:  = ± 15°.
  • Base terminal connected.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number BPV11
Manufacturer Vishay
File Size 105.93 KB
Description Silicon NPN Phototransistor
Datasheet download datasheet BPV11 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com BPV11 Vishay Semiconductors Silicon NPN Phototransistor 12785 DESCRIPTION BPV11 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package with base terminal. It is sensitive to visible and near infrared radiation. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity:  = ± 15° • Base terminal connected • Material categorization: For definitions of compliance please see www.vishay.
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