SiHFU9214 - Power MOSFET

Vishay

Download the SiHFU9214 datasheet PDF. This datasheet also covers the SiHFR9214 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area.

Key Features

Advanced process technology.
Fully avalanche rated.
Surface-mount (IRFR9214, SiHFR9214).
Straight lead (IRFU9214, SiHFU9214).
P-channel.
Fast switching Available.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

SiHFU9214 power mosfet by Vishay - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SiHFR9214_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SiHFU9214
Manufacturer	Vishay
File Size	261.78 KB
Description	Power MOSFET
Datasheet	SiHFU9214 Datasheet

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Other Datasheets by Vishay

Part Number	Description
SiHFU9210	Power MOSFET
SiHFU9220	Power MOSFET
SiHFU9014	Power MOSFET
SiHFU9020	Power MOSFET
SiHFU9022	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D S G GS GD S D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration -250 VGS = -10 V 3.0 14 3.1 6.8 Single FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9214, SiHFR9214) • Straight lead (IRFU9214, SiHFU9214) • P-channel • Fast switching Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area.