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SiHFU9014 - Power MOSFET

Download the SiHFU9014 datasheet PDF. This datasheet also covers the SiHFR9014 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Features

  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • Surface Mount (IRFR9014, SiHFR9014).
  • Straight Lead (IRFU9014, SiHFU9014).
  • Available in Tape and Reel.
  • P-Channel.
  • Fast Switching.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SiHFR9014_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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SiHFU9010 Power MOSFET Vishay
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Other Datasheets by Vishay

Part Number Description
SiHFU9020 Power MOSFET
SiHFU9022 Power MOSFET
SiHFU9024 Power MOSFET
SiHFU9110 Power MOSFET
SiHFU9120 Power MOSFET

Full PDF Text Transcription

Click to expand full text
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 60 VGS = - 10 V Qg (Max.) (nC) 12 Qgs (nC) Qgd (nC) 3.8 5.1 Configuration Single 0.50 S DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9014, SiHFR9014) • Straight Lead (IRFU9014, SiHFU9014) • Available in Tape and Reel • P-Channel • Fast Switching • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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