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IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
www.vishay.com
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
S G
GS
GD S
D P-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC)
-100
VGS = -10 V
1.2
8.7
2.2
Qgd (nC) Configuration
4.1 Single
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFR9110, SiHFR9110)
• Straight lead (IRFU9110, SiHFU9110)
• Available in tape and reel • P-channel
Available
• Fast switching
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.