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SiHFU1N60A - Power MOSFET

Download the SiHFU1N60A datasheet PDF. This datasheet also covers the SiHFR1N60A variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low gate charge Qg results in simple drive requirement.
  • Improved gate, avalanche and dynamic dV/dt ruggedness.
  • Fully characterized capacitance and avalanche voltage and current Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SiHFR1N60A_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Vishay

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 7.0 14 2.7 8.1 Single FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current Available • Material categorization: for definitions of compliance please see www.vishay.