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SiHFR430A - Power MOSFET

Key Features

  • Low gate charge Qg results in simple drive requirement.
  • Improved gate, avalanche, and dynamic dV/dt ruggedness.
  • Fully characterized capacitance and avalanche voltage and current Available.
  • Effective Coss specified.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) 500 VGS = 10 V 1.7 24 6.5 Qgd (nC) Configuration 13 Single FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current Available • Effective Coss specified • Material categorization: for definitions of compliance please see www.vishay.